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1

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

Marmalyuk, Aleksandr A, Ladugin, M A, Yarotskaya, I V, Panarin, V A, Mikaelyan, G T

Journal:

Quantum Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 384 KB

english, 2012

2

High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength

Slipchenko, Sergey O., Podoskin, Aleksandr A., Rozhkov, Alexsander V., Pikhtin, Nikita A., Tarasov, Ilya S., Bagaev, Timur A., Zverkov, Mikhail V., Konyaev, Vadim P., Kurniavko, Yuriy V., Ladugin, Max

Journal:

IEEE Photonics Technology Letters

Année:

2013

Langue:

english

Fichier:

PDF, 469 KB

english, 2013

3

Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD

Sozykin, A.S., Strelchenko, S.S., Prokolkin, E.V., Ladugin, M.A.

Journal:

Journal of Crystal Growth

Année:

2013

Langue:

english

Fichier:

PDF, 285 KB

english, 2013

4

High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

Davydova, Evgeniya I, Ladugin, M A, Marmalyuk, Aleksandr A, Padalitsa, A A, Petrovskii, A V, Sukharev, A V, Uspenskii, Mikhail B, Shishkin, Viktor A

Journal:

Quantum Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2009

5

High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

Gorlachuk, P V, Ryaboshtan, Yu L, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Kurnosov, V D, Kurnosov, K V, Zhuravleva, O V, Romantsevich, V I, Chernov, R V, Ivanov, A V, Simakov, V A

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 109 KB

english, 2013

6

High-Power Laser Thyristors With High Injection Efficiency ( $\lambda =890$ –910 nm)

Slipchenko, Sergey O., Podoskin, Aleksandr A., Rozhkov, Alexsander V., Pikhtin, Nikita A., Tarasov, Ilya S., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Padalitsa, Anatoliy A., Simak

Journal:

IEEE Photonics Technology Letters

Année:

2015

Langue:

english

Fichier:

PDF, 903 KB

english, 2015

7

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Slipchenko, Sergey O., Podoskin, Aleksandr A., Soboleva, Olga S., Pikhtin, Nikita A., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Simakov, Vladimir A., Tarasov, Il’ya S.

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 4.23 MB

english, 2016

8

Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

Ladugin, M. A., Andreev, A. Yu., Yarotskaya, I. V., Ryaboshtan, Yu. L., Bagaev, T. A., Padalitsa, A. A., Marmalyuk, A. A., Vasil’ev, M. G.

Journal:

Inorganic Materials

Année:

2019

Langue:

english

Fichier:

PDF, 548 KB

english, 2019

9

The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

Telegin, K Yu, Ladugin, M A, Andreev, A Yu, Yarotskaya, I V, Volkov, N A, Padalitsa, A A, Lobintsov, A V, Aparnikov, A N, Sapozhnikov, S M, Marmalyuk, A A

Journal:

Quantum Electronics

Année:

2020

Fichier:

PDF, 489 KB

2020

10

Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure

M. M. Zverev, N. A. Gamov, E. V. Zhdanova, M. A. Ladugin, A. A. Marmalyuk, D. V. Peregoudov, V. B. Studionov

Journal:

Optics and Spectroscopy

Année:

2011

Langue:

english

Fichier:

PDF, 141 KB

english, 2011

11

A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD

D. A. Vinokurov, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, N. A. Pikhtin, V. A. Simakov, A. V. Sukharev, N. V. Fetisova, V. V. Shamakhov, I. S. Tarasov

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 185 KB

english, 2009

12

A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

D. A. Vinokurov, V. P. Konyaev, M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk, A. A. Padalitsa, A. N. Petrunov, N. A. Pikhtin, V. A. Simakov, S. O. Slipchenko, A. V. Sukharev, N. V. Fetisova, V. V.

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 171 KB

english, 2010

13

Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

D. A. Vinokurov, M. A. Ladugin, A. V. Lyutetskii, A. A. Marmalyuk, A. N. Petrunov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, N. V. Fetisova, I. S. Shashkin, N. S. Averkiev, I.

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 189 KB

english, 2010

14

The temperature dependence of internal optical losses in semiconductor lasers (λ = 900–920 nm)

N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin, A. A. Marmalyuk, A. A. Podoskin, I. S. Tarasov

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 207 KB

english, 2010

15

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk, A. A. Padalitsa, N. A. Pikhtin, A. A. Podoskin, N. A. Rudova, S. O. Slipchenko, I. S. Shashkin, A. D. Bondarev, I. S. Tarasov

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 207 KB

english, 2010

16

Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

A. A. Marmalyuk, E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevsky, M. A. Ladugin, E. I. Lebedeva, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, N. A.

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 273 KB

english, 2011

17

Physicochemical aspects of quantum dot array formation in the InAs/GaAs system by droplet epitaxy under MOVPE conditions

R. Kh. Akchurin, I. A. Boginskaya, N. T. Vagapova, A. A. Marmalyuk, M. A. Ladugin

Journal:

Technical Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 311 KB

english, 2010

18

Development of fundamentals of droplet epitaxy for the formation of quantum dot arrays in the InAs/GaAs system under MOVPE conditions

Akchurin, R. Kh., Boginskaya, I. A., Marmalyuk, A. A., Ladugin, M. A., Surnina, M. A.

Journal:

Russian Microelectronics

Année:

2012

Langue:

english

Fichier:

PDF, 491 KB

english, 2012

19

High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides

Ladugin, M A, Koval', Yu P, Marmalyuk, Aleksandr A, Petrovskii, V A, Bagaev, T A, Andreev, A Yu, Padalitsa, A A, Simakov, V A

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 537 KB

english, 2013

20

High-power cw laser bars of the 750 – 790-nm wavelength range

Degtyareva, N S, Kondakov, S A, Mikayelyan, G T, Gorlachuk, P V, Ladugin, M A, Marmalyuk, Aleksandr A, Ryaboshtan, Yu L, Yarotskaya, I V

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 535 KB

english, 2013

21

Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions

Akchurin, R. Kh., Berliner, L. B., Boginskaya, I. A., Gordeev, E. G., Egorova, E. V., Marmalyuk, A. A., Ladugin, M. A., Surnina, M. A.

Journal:

Technical Physics

Année:

2014

Langue:

english

Fichier:

PDF, 567 KB

english, 2014

22

Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

Konyaev, V. P., Marmalyuk, A. A., Ladugin, M. A., Bagaev, T. A., Zverkov, M. V., Krichevsky, V. V., Padalitsa, A. A., Sapozhnikov, S. M., Simakov, V. A.

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 163 KB

english, 2014

23

Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures

Marmalyuk, A. A., Andreev, A. Yu., Konyaev, V. P., Ladugin, M. A., Lebedeva, E. I., Meshkov, A. S., Morozyuk, A. N., Sapozhnikov, S. M., Danilov, A. I., Simakov, V. A., Telegin, K. Yu., Yarotskaya, I.

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 148 KB

english, 2014

24

A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm

Slipchenko, S. O., Podoskin, A. A., Rozhkov, A. V., Pikhtin, N. A., Tarasov, I. S., Bagaev, T. A., Konyaev, V. P., Ladugin, M. A., Marmalyuk, A. A., Padalitsa, A. A., Simakov, V. A.

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 1.50 MB

english, 2014

25

[IEEE 2014 International Conference Laser Optics - Saint Petersburg, Russia (2014.6.30-2014.7.4)] 2014 International Conference Laser Optics - Epitaxially intergrated power efficient switch for high power laser pulse generation in semiconductor heterostructures of 900 nm wavelength

Slipchenko, S.O., Podoskin, A.A., Rozhkov, A.V., Pikhtin, N.A., Tarasov, I.S., Bagaev, T.A., Zverkov, M.V., Konyaev, V.P., Kurniavko, Y.V., Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Simakov, V.

Année:

2014

Langue:

english

Fichier:

PDF, 77 KB

english, 2014

26

[IEEE 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sudak, Ukraine (2013.09.9-2013.09.13)] 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013) - Broadband superluminescent diodes of NIR range with quasi-Gaussian spectra

Andreeva, E. V., Il'chenko, S. N., Kostin, Yu. O., Ladugin, M. A., Lapin, P. I., Marmalyuk, A. A., Yakubovich, S. D.

Année:

2013

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2013

27

[IEEE 2013 IEEE 12th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM) - Sudak, Ukraine (2013.09.11-2013.09.13)] 2013 IEEE 12th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2013) - Pulse low-energy electron beam pumped IR-lasers based on InGaAs/AlGaAs/GaAs nanoheterostructures

Gamov, N. A., Zhdanova, E. V., Zverev, M. M., Marmalyuk, A. A., Ladugin, M. A., Anishchenko, I. A., Bagaev, T. A., Peregoudov, D. V., Studionov, V. B.

Année:

2013

Langue:

english

Fichier:

PDF, 3.02 MB

english, 2013

28

[IEEE 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sudak, Ukraine (2013.09.9-2013.09.13)] 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013) - Broadband semiconductor optical amplifiers of NIR range based on nanoheterostructures

Andreeva, E.V., Il'chenko, S.N., Ladugin, M.A., Lobintsov, A.A., Marmalyuk, A.A., Shramenko, M.V., Yakubovich, S.D.

Année:

2013

Langue:

english

Fichier:

PDF, 3.70 MB

english, 2013

29

808-nm laser diode bars based on epitaxially stacked double heterostructures

Davydova, Evgeniya I, Konyaev, V P, Ladugin, M A, Lebedeva, E I, Marmalyuk, Aleksandr A, Padalitsa, A A, Petrov, S V, Sapozhnikov, S M, Simakov, V A, Uspenskii, Mikhail B, Yarotskaya, I V

Journal:

Quantum Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 65 KB

english, 2010

30

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Novel In-Plane Semiconductor Lasers XIV - New approach for high-peak power lasing based on epitaxially integrated AlGaAs/GaAs laser-thyristor heterostructure

Belyanin, Alexey A., Smowton, Peter M., Slipchenko, Sergey, Podoskin, Alexsandr, Rozhkov, Alexsandr, Pikhtin, Nikita, Tarasov, Il`ya, Bagaev, Timur, Ladugin, Maxim, Marmalyuk, Alexsandr, Padalitsa, An

Année:

2015

Langue:

english

Fichier:

PDF, 273 KB

english, 2015

31

Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm

Andreeva, E V, Il'ichenko, S N, Kostin, Yu O, Ladugin, M A, Lapin, P I, Marmalyuk, A A, Yakubovich, S D

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2013

32

High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

Davydova, Evgeniya I, Zverkov, M V, Konyaev, V P, Krichevskii, V V, Ladugin, M A, Marmalyuk, Aleksandr A, Padalitsa, A A, Simakov, V A, Sukharev, A V, Uspenskii, Mikhail B

Journal:

Quantum Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 730 KB

english, 2009

33

Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 — 800 nm

Il'chenko, S N, Kostin, Yu O, Kukushkin, I A, Ladugin, M A, Lapin, P I, Lobintsov, A A, Marmalyuk, Aleksandr A, Yakubovich, S D

Journal:

Quantum Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 597 KB

english, 2011

34

1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

Gorlachuk, P V, Ryaboshtan, Yu L, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Kurnosov, V D, Kurnosov, K V, Zhuravleva, O V, Romantsevich, V I, Chernov, R V, Ivanov, A V, Simakov, V A

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 423 KB

english, 2013

35

Dual-wavelength laser diodes based on epitaxially stacked heterostructures

Davydova, Evgeniya I, Konyaev, V P, Ladugin, M A, Lebedeva, E I, Marmalyuk, Aleksandr A, Padalitsa, A A, Petrov, S V, Sapozhnikov, S M, Simakov, V A, Uspenskii, Mikhail B, Yarotskaya, I V

Journal:

Quantum Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 175 KB

english, 2010

36

AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability

Marmalyuk, A A, Ladugin, M A, Andreev, A Yu, Telegin, K Yu, Yarotskaya, I V, Meshkov, A S, Konyaev, V P, Sapozhnikov, S M, Lebedeva, E I, Simakov, V A

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 429 KB

english, 2013

37

Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

Andreeva, E V, Il'chenko, S N, Ladugin, M A, Lobintsov, A A, Marmalyuk, A A, Shramenko, M V, Yakubovich, S D

Journal:

Quantum Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 704 KB

english, 2013

38

Nearest-IR superluminescent diodes with a 100-nm spectral width

Il'chenko, S N, Ladugin, M A, Marmalyuk, Aleksandr A, Yakubovich, S D

Journal:

Quantum Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2012

39

Double integrated nanostructures for pulsed 0.9-μm laser diodes

M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev

Année:

2008

Langue:

english

Fichier:

PDF, 248 KB

english, 2008

40

Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices

Andronov, A. A., Dodin, E. P., Zinchenko, D. I., Nozdrin, Yu. N., Ladugin, M. A., Marmalyuk, A. A., Padalitsa, A. A., Belyakov, V. A., Ladenkov, I. V., Fefelov, A. G.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 637 KB

english, 2015

41

[IEEE 2014 IEEE Photonics Conference (IPC) - San Diego, CA (2014.10.12-2014.10.16)] 2014 IEEE Photonics Conference - New type of high power pulse semiconductor laser based on epitaxially-integrated AlGaAs/GaAs thyristor heterostructure

Slipchenko, S. O., Podoskin, A. A., Rozhkov, A. V., Vasileva, V. V., Pikhtin, N. A., Tarasov, I. S., Bagaev, T. A., Zverkov, M. V., Konyaev, V. P., Kurniavko, Y. V., Ladugin, M. A., Marmalyuk, A. A.,

Année:

2014

Langue:

english

Fichier:

PDF, 400 KB

english, 2014

42

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

Podoskin, A A, Soboleva, O S, Zakharov, M S, Veselov, D A, Zolotarev, V V, Pikhtin, N A, Tarasov, I S, Bagaev, T A, Ladugin, M A, Marmalyuk, A A, Simakov, V A, Slipchenko, S O

Journal:

Semiconductor Science and Technology

Année:

2015

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2015

43

Quantum cascade laser based on GaAs/Al 0.45 Ga 0.55 As heteropair grown by MOCVD

Zasavitskii, I I, Zubov, A N, Andreev, A Yu, Bagaev, T A, Gorlachuk, P V, Ladugin, M A, Padalitsa, A A, Lobintsov, A V, Sapozhnikov, S M, Marmalyuk, A A

Journal:

Quantum Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2016

44

Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-Thyristors

Slipchenko, Sergey O., Podoskin, Alexandr A., Soboleva, Olga S., Veselov, Dmitrii A., Zolotarev, Vasilii V., Pikhtin, Nikita A., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Simakov,

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 829 KB

english, 2016

45

[IEEE 2016 International Conference Laser Optics (LO) - Saint Petersburg, Russia (2016.6.27-2016.7.1)] 2016 International Conference Laser Optics (LO) - Infrared, green, and blue-violet pulsed lasers based on semiconductor structures pumped by low-energy electron beam

Zverev, M. M., Gamov, N. A., Zhdanova, E. V., Studionov, V. B., Sedova, I. V., Sorokin, S. V., Gronin, S. V., Ivanov, S. V., Ladugin, M. A., Padalitsa, A., Mazalov, A. V., Kureshov, V., Marmalyuk, A.

Année:

2016

Langue:

english

Fichier:

PDF, 160 KB

english, 2016

46

[IEEE 2016 International Conference Laser Optics (LO) - Saint Petersburg, Russia (2016.6.27-2016.7.1)] 2016 International Conference Laser Optics (LO) - Effect of waveguide design on AlGalnAs/InP laser diode characteristics

Veselov, D. A., Shashkin, I. S., Ayusheva, K. R., Lyutetskiy, A. V., Pikhtin, N. A., Slipchenko, S. O., Padalitsa, A. A., Ladugin, M. A., Marmalyuk, A. A., Ryaboshtan, Yu. L., Tarasov, I. S.

Année:

2016

Langue:

english

Fichier:

PDF, 166 KB

english, 2016

47

[IEEE 2016 International Conference Laser Optics (LO) - Saint Petersburg, Russia (2016.6.27-2016.7.1)] 2016 International Conference Laser Optics (LO) - Quantum cascade laser grown by MOCVD and operating at 9,7 μm

Ladugin, M. A., Andreev, A. Yu., Bagaev, T. A., Gorlachuk, P. V., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Ryaboshtan, Yu. L., Sapozhnikov, S. M., Simakov, V. A., Telegin, K. Yu., Zasavit

Année:

2016

Langue:

english

Fichier:

PDF, 189 KB

english, 2016

48

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

Kostin, Yu O, Ladugin, M A, Lobintsov, A A, Marmalyuk, A A, Chamorovsky, A Yu, Shramenko, M V, Yakubovich, S D

Journal:

Quantum Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2015

49

Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors

Slipchenko, S. O., Podoskin, A. A., Soboleva, O. S., Pikhtin, N. A., Bagaev, T. A., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A., Tarasov, I. S.

Journal:

Journal of Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2016

50

Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures

Slipchenko, S. O., Podoskin, A. A., Soboleva, O. S., Pikhtin, N. A., Bagaev, T. A., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A., Tarasov, I. S.

Journal:

Journal of Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 3.38 MB

english, 2017